To investigate this, the researchers deposited (Al 0.8 Sc 0.2)N film on a silicon substrate using sputtering at 400°C. The films were placed between two electrodes of platinum (Pt) and titanium ...

In the search for silicon-compatible materials, aluminum scandium nitride (AlScN), which had already been flagged as an ...

Aluminum scandium nitride can be integrated into existing silicon and has been shown to have ferroelectric properties necessary for computers. Palliard is researching, at an atomic level ...

In the search for silicon-compatible materials, aluminum scandium nitride (AlScN), which had already been flagged as an excellent piezoelectric -- referring to a material's ability to generate ...

This new kind of flash storage utilizes a 45nm wedge of ferroelectric aluminum scandium nitride (AlScN ... The research notes silicon carbide is typically used for logic in these environments ...

By introducing (doping) Scandium to Aluminum Nitride at levels of around ... Germanium is crucial for producing wafers featuring strained silicon and the most high-performance chips made by ...

The addition of scandium to aluminum alloys produces a much stronger ... and particularly solar quality silicon ("polysilicon") for solar electricity applications. Our first reactors produced ...

Aluminum scandium nitride films: Enabling next-gen ferroelectric memory devices. ScienceDaily . Retrieved May 28, 2025 from www.sciencedaily.com / releases / 2024 / 07 / 240722155008.htm ...